? semiconductor components industries, llc, 2005 september, 2005 ? rev. 1 1 publication order number: bc487/d bc487, BC487B high current transistors npn silicon features ? pb?free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 60 vdc collector ? base voltage v cbo 60 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous i c 0.5 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information bc487 to?92 5000 units / box BC487B to?92 5000 units / box BC487Brl1 to?92 2000/tape & ree l marking diagram collector 1 2 base 3 emitter http://onsemi.com bc48 7b ayww ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. bc487g to?92 (pb?free) 5000 units / box BC487B = device code a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location) BC487Bg to?92 (pb?free) 5000 units / box to?92 case 29 style 17 3 2 1
bc487, BC487B http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (note 1) (i c = 10 madc, i b = 0) v (br)ceo 60 ? ? vdc collector ?base breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 60 ? ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector cutoff current (v cb = 40 vdc, i e = 0) i cbo ? ? 100 nadc on characteristics* dc current gain (i c = 10 madc, v ce = 2.0 vdc) (i c = 100 madc, v ce = 2.0 vdc) bc487 BC487B (i c = 1.0 adc, v ce = 5.0 vdc)* h fe 40 60 160 15 ? ? 260 ? ? 400 400 ? ? collector ?emitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) v ce(sat) ? ? 0.2 0.3 0.5 ? vdc base ?emitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) (1) v be(sat) ? ? 0.85 0.9 1.2 ? vdc dynamic characteristics current?gain ? bandwidth product (i c = 50 madc, v ce = 2.0 vdc, f = 100 mhz) f t ? 200 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob ? 7.0 ? pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ib ? 50 ? pf 1. pulse test: pulse width = 300 s, duty cycle 2.0%. figure 1. switching time test circuits *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities 5.0 s +10 v 0 v in 5.0 f 100 100 turn?on time ?1.0 v v cc +40 v r l output *c s < 6.0 pf t r = 3.0 ns 5.0 s v in 5.0 f 100 100 turn?off time +v bb v cc +40 v r l output *c s < 6.0 pf t r = 3.0 ns r b r b
bc487, BC487B http://onsemi.com 3 figure 2. current?gain ? bandwidth product i c , collector current (ma) 200 70 50 30 20 10 7.0 5.0 3.0 2.0 300 200 100 70 50 30 v ce = 2.0 v t j = 25 c f, current?gain bandwidth product (mhz) t c, capacitance (pf) t, time (ns) figure 3. capacitance v r , reverse voltage (volts) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 80 60 40 20 10 4.0 t j = 25 c c obo c ibo 8.0 figure 4. switching time i c , collector current (ma) 500 50 30 20 10 7.0 5.0 1.0 k v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c 700 500 300 200 100 70 50 30 20 10 t s t f t r t d @ v be(off) = 0.5 v 100 6.0 200 100 70 300 figure 5. thermal response t, time (ms) 1.0 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an?469) t j(pk) ? t c = p (pk) z jc(t) t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) z jc(t) = r(t) ? r jc z ja(t) = r(t) ? r ja single pulse
bc487, BC487B http://onsemi.com 4 v ce , collector?emitter voltage (volts) 1.0 k 1.0 i c , collector current (ma) 2.0 5.0 figure 6. active region ? safe operating area current limit thermal limit second breakdown limit 700 500 300 200 100 70 50 30 20 10 3.0 10 20 50 30 7.0 70 100 bc489 100 s 1.0 ms 1.0 s t c = 25 c t a = 25 c figure 7. dc current gain i c , collector current (ma) 400 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 200 100 80 60 40 h fe , dc current gain t j =125 c 25 c ?55 c v ce = 1.0 v 300 500 i c , collector current (ma) figure 8. ?on? voltages v, voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 200 20 t j = 25 c v be(on) @ v ce = 1.0 v v ce(sat) @ i c /i b = 10 5.0 10 50 100 v be(sat) @ i c /i b = 10 i c , collector current (ma) figure 9. collector saturation region v ce , collector?emitter voltage (volts ) 1.0 0.8 0.6 0.4 0.2 0 0.1 10 1.0 t j = 25 c i c = 10 ma 0.05 0.2 0.5 2.0 5.0 20 100 ma 250 ma 50 ma 2.0 500 50 500 ma
bc487, BC487B http://onsemi.com 5 i c , collector current (ma) figure 10. base?emitter temperature coefficient ?0.8 ?2.8 1.0 100 10 r vb for v be 0.5 2.0 5.0 20 50 200 ?1.2 ?1.6 ?2.0 ?2.4 r vb , temperature coefficient (mv/ c) 500 i c , collector current (ma) figure 11. ?on? voltages v, voltage (volts) ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 t j = 25 c v be(on) @ v ce = ?1.0 v v ce(sat) @ i c /i b = 10 ?0.5 v be(sat) @ i c /i b = 10 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?500 i b , base current (ma) figure 12. collector saturation region v ce , collector?emitter voltage (volts) ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 ?0.1 ?10 ?1.0 t j = 25 c i c = ?10 ma ?0.05 ?0.2 ?0.5 ?2.0 ?5.0 ?20 ?50 ma ?50 ?100 ma ?250 ma ?500 ma i c , collector current (ma) figure 13. base?emitter temperature coefficient ?0.8 ?2.8 ?1.0 ?100 ?10 r vb for v be ?0.5 ?2.0 ?5.0 ?20 ?50 ?200 ?1.2 ?1.6 ?2.0 ?2.4 r vb , temperature coefficient (mv/ c) ?500
bc487, BC487B http://onsemi.com 6 package dimensions to?92 (to?226 ) case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 style 17: pin 1. collector 2. base 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bc487/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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